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Low-temperature chemical vapor deposition of highly doped n-type epitaxial Si at high growth rate
Low-temperature chemical vapor deposition of highly doped n-type epitaxial Si at high growth rate
Low-temperature chemical vapor deposition of highly doped n-type epitaxial Si at high growth rate
Nguyen, N. D. (Autor:in) / Loo, R. (Autor:in) / Caymax, M. (Autor:in)
APPLIED SURFACE SCIENCE ; 254 ; 6072-6075
01.01.2008
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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