Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Band bending measurement of HfO2/SiO2/Si capacitor with ultra-thin La2O3 insertion by XPS
Band bending measurement of HfO2/SiO2/Si capacitor with ultra-thin La2O3 insertion by XPS
Band bending measurement of HfO2/SiO2/Si capacitor with ultra-thin La2O3 insertion by XPS
Kakushima, K. (Autor:in) / Okamoto, K. (Autor:in) / Adachi, M. (Autor:in) / Tachi, K. (Autor:in) / Song, J. (Autor:in) / Sato, S. (Autor:in) / Kawanago, T. (Autor:in) / Ahmet, P. (Autor:in) / Tsutsui, K. (Autor:in) / Sugii, N. (Autor:in)
APPLIED SURFACE SCIENCE ; 254 ; 6106-6108
01.01.2008
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Band bending and band alignment at HfO2/HfSixOy/Si interfaces
British Library Online Contents | 2007
|British Library Online Contents | 2004
|British Library Online Contents | 2013
|British Library Online Contents | 2016
|Optical properties of the Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings
British Library Online Contents | 2014
|