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Inductively coupled plasma reactive ion etching of sapphire using C2F6- and NF3-based gas mixtures
Inductively coupled plasma reactive ion etching of sapphire using C2F6- and NF3-based gas mixtures
Inductively coupled plasma reactive ion etching of sapphire using C2F6- and NF3-based gas mixtures
Kang, D. J. (Autor:in) / Kim, I. S. (Autor:in) / Moon, J. H. (Autor:in) / Lee, B. T. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 11 ; 16-19
01.01.2008
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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