Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Depth distribution of Cs implanted into Si at steady-state during dual beam ToF-SIMS profiling
Depth distribution of Cs implanted into Si at steady-state during dual beam ToF-SIMS profiling
Depth distribution of Cs implanted into Si at steady-state during dual beam ToF-SIMS profiling
Vitchev, R. G. (Autor:in) / Brison, J. (Autor:in) / Houssiau, L. (Autor:in)
APPLIED SURFACE SCIENCE ; 255 ; 1331-1333
01.01.2008
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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