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    Depth distribution of Cs implanted into Si at steady-state during dual beam ToF-SIMS profiling

    New search for: Vitchev, R. G.
    New search for: Brison, J.
    New search for: Houssiau, L.

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    Depth distribution of Cs implanted into Si at steady-state during dual beam ToF-SIMS profiling

    New search for: Vitchev, R. G.
    New search for: Brison, J.
    New search for: Houssiau, L.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Depth distribution of Cs implanted into Si at steady-state during dual beam ToF-SIMS profiling

    New search for: Vitchev, R. G.
    New search for: Brison, J.
    New search for: Houssiau, L.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Depth distribution of Cs implanted into Si at steady-state during dual beam ToF-SIMS profiling

    Contributors:

    Vitchev, R. G. (author) / Brison, J. (author) / Houssiau, L. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 255 ; 1331-1333

    Publication date:

    2008-01-01

    Size:

    3 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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