Effects of crystalline regrowth on dopant profiles in preamorphized silicon

Hopstaken, M. J. P. / Tamminga, Y. / Verheijen, M. A. et al. | British Library Online Contents | 2004

Characterization of a Thermal Oxidation Process on SiC Preamorphized by Ar Ion Implantation

Poggi, A. / Nipoti, R. / Solmi, S. et al. | British Library Online Contents | 2004

Recrystallization of boron-doped and undoped preamorphized silicon layers by rapid and conventional thermal annealing

Faure, J. / Claverie, A. / Laanab, L. et al. | British Library Online Contents | 1994

Evolution of boron-interstitial clusters in preamorphized silicon without the contribution of end-of-range defects

Aboy, M. / Pelaz, L. / Lopez, P. et al. | British Library Online Contents | 2008

Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation

Hijikata, Y. / Yoshida, S. / Moscatelli, F. et al. | British Library Online Contents | 2007