Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation

Hijikata, Y. / Yoshida, S. / Moscatelli, F. et al. | British Library Online Contents | 2007

Modeling of the transient enhanced diffusion of boron implanted into preamorphized silicon: the case of BF2+ implantation

Dusch, A. / Marcon, J. / Masmoudi, K. et al. | British Library Online Contents | 2001

B electrical activation in crystalline and preamorphized Ge

Bruno, E. / Impellizzeri, G. / Mirabella, S. et al. | British Library Online Contents | 2008

Effects of crystalline regrowth on dopant profiles in preamorphized silicon

Hopstaken, M. J. P. / Tamminga, Y. / Verheijen, M. A. et al. | British Library Online Contents | 2004

Recrystallization of boron-doped and undoped preamorphized silicon layers by rapid and conventional thermal annealing

Faure, J. / Claverie, A. / Laanab, L. et al. | British Library Online Contents | 1994