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High Channel Mobility of 4H-SiC MOSFET Fabricated on Macro-Stepped Surface

Masuda, T. / Harada, S. / Tsuno, T. / Namikawa, Y. / Kimoto, T.

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High Channel Mobility of 4H-SiC MOSFET Fabricated on Macro-Stepped Surface

Masuda, T. / Harada, S. / Tsuno, T. / Namikawa, Y. / Kimoto, T.

High Channel Mobility of 4H-SiC MOSFET Fabricated on Macro-Stepped Surface

Masuda, T. / Harada, S. / Tsuno, T. / Namikawa, Y. / Kimoto, T.

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Check availability in my library

Order at Subito €

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Document information

Title:

High Channel Mobility of 4H-SiC MOSFET Fabricated on Macro-Stepped Surface

Contributors:

Masuda, T. (author) / Harada, S. (author) / Tsuno, T. (author) / Namikawa, Y. (author) / Kimoto, T. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 695-698

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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