Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)
Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)
Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)
An, J.H. (Autor:in) / Lee, G.S. (Autor:in) / Lee, W.J. (Autor:in) / Shin, B.C. (Autor:in) / Seo, J.D. (Autor:in) / Ku, K.R. (Autor:in) / Seo, H.D. (Autor:in) / Jeong, H.D. (Autor:in)
MATERIALS SCIENCE FORUM ; 600/603 ; 831-834
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2009
|Multiscale material removal modeling of chemical mechanical polishing
British Library Online Contents | 2003
|British Library Online Contents | 2008
|A Method to Improve Uniformity of Material Removal of Chemical Mechanical Polishing in LCOS Process
British Library Online Contents | 2008
|British Library Online Contents | 2011
|