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Pair-Generation of the Basal-Plane-Dislocation during Crystal Growth of SiC
Pair-Generation of the Basal-Plane-Dislocation during Crystal Growth of SiC
Pair-Generation of the Basal-Plane-Dislocation during Crystal Growth of SiC
Nishiguchi, T. (Autor:in) / Furusho, T. (Autor:in) / Isshiki, T. (Autor:in) / Nishio, K. (Autor:in) / Shiomi, H. (Autor:in) / Nishino, S. (Autor:in)
MATERIALS SCIENCE FORUM ; 600/603 ; 329-332
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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