Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density

Tanaka, T. / Kawabata, N. / Mitani, Y. et al. | British Library Online Contents | 2014

Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers

Ha, S. / Mieszkowski, P. / Rowland, L. B. et al. | British Library Online Contents | 2002

CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the (0001) Basal Plane

Hallin, C. / Ellison, A. / Ivanov, I. G. et al. | British Library Online Contents | 1998

Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth

Stahlbush, R.E. / Van Mil, B.L. / Liu, K.X. et al. | British Library Online Contents | 2009

Nanowire-Templated Lateral Epitaxial Growth of Low-Dislocation Density Nonpolar a-Plane GaN on r-Plane Sapphire

Li, Q. / Lin, Y. / Creighton, J. R. et al. | British Library Online Contents | 2009