Growth of Low Basal Plane Dislocation Density 4H-SiC Crystals in Controlled Temperature Distribution inside the Crucible: Fid-Bau Portal

Growth of Low Basal Plane Dislocation Density 4H-SiC Crystals in Controlled Temperature Distribution inside the Crucible

Tsuge, H. / Ushio, S. / Sato, S. / Katsuno, M. / Fujimoto, T. / Yano, T.

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Growth of Low Basal Plane Dislocation Density 4H-SiC Crystals in Controlled Temperature Distribution inside the Crucible

Tsuge, H. / Ushio, S. / Sato, S. / Katsuno, M. / Fujimoto, T. / Yano, T.

Growth of Low Basal Plane Dislocation Density 4H-SiC Crystals in Controlled Temperature Distribution inside the Crucible

Tsuge, H. / Ushio, S. / Sato, S. / Katsuno, M. / Fujimoto, T. / Yano, T.

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Titel:

Growth of Low Basal Plane Dislocation Density 4H-SiC Crystals in Controlled Temperature Distribution inside the Crucible

Beteiligte:

Tsuge, H. (Autor:in) / Ushio, S. (Autor:in) / Sato, S. (Autor:in) / Katsuno, M. (Autor:in) / Fujimoto, T. (Autor:in) / Yano, T. (Autor:in) / Lebedev, A.A. / Davydov, S.Y. / Ivanov, P.A. / Levinshtein, M.E.

Erschienen in:

Silicon Carbide and Related Materials 2012 Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation ; 7-10

MATERIALS SCIENCE FORUM ; 740/742

Erscheinungsdatum:

01.01.2013

Format / Umfang:

4 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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