Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density: Fid-Bau Portal

Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density

Tanaka, T. / Kawabata, N. / Mitani, Y. / Tomita, N. / Tarutani, M. / Kuroiwa, T. / Toyoda, Y. / Imaizumi, M. / Sumitani, H. / Yamakawa, S.

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Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density

Tanaka, T. / Kawabata, N. / Mitani, Y. / Tomita, N. / Tarutani, M. / Kuroiwa, T. / Toyoda, Y. / Imaizumi, M. / Sumitani, H. / Yamakawa, S.

Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density

Tanaka, T. / Kawabata, N. / Mitani, Y. / Tomita, N. / Tarutani, M. / Kuroiwa, T. / Toyoda, Y. / Imaizumi, M. / Sumitani, H. / Yamakawa, S.

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Titel:

Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density

Beteiligte:

Tanaka, T. (Autor:in) / Kawabata, N. (Autor:in) / Mitani, Y. (Autor:in) / Tomita, N. (Autor:in) / Tarutani, M. (Autor:in) / Kuroiwa, T. (Autor:in) / Toyoda, Y. (Autor:in) / Imaizumi, M. (Autor:in) / Sumitani, H. (Autor:in) / Yamakawa, S. (Autor:in)

Erschienen in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 91-94

MATERIALS SCIENCE FORUM ; 778/780

Erscheinungsdatum:

01.01.2014

Format / Umfang:

4 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density

Dudley, M. / Zhang, N. / Zhang, Y. et al. | British Library Online Contents | 2010

Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth

Stahlbush, R.E. / Van Mil, B.L. / Liu, K.X. et al. | British Library Online Contents | 2009

Low Trap Concentration and Low Basal-Plane Dislocation Density in 4H-SiC Epilayers Grown at High Growth Rate

Hori, T. / Danno, K. / Kimoto, T. | British Library Online Contents | 2007

Nanowire-Templated Lateral Epitaxial Growth of Low-Dislocation Density Nonpolar a-Plane GaN on r-Plane Sapphire

Li, Q. / Lin, Y. / Creighton, J. R. et al. | British Library Online Contents | 2009

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