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    Effects of cap layer on ohmic Ti/Al contacts to Si+ implanted GaN

    New search for: Placidi, M.
    New search for: Perez-Tomas, A.
    New search for: Constant, A.
    New search for: Rius, G.
    New search for: Mestres, N.
    New search for: Millan, J.
    New search for: Godignon, P.

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    Effects of cap layer on ohmic Ti/Al contacts to Si+ implanted GaN

    New search for: Placidi, M.
    New search for: Perez-Tomas, A.
    New search for: Constant, A.
    New search for: Rius, G.
    New search for: Mestres, N.
    New search for: Millan, J.
    New search for: Godignon, P.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Effects of cap layer on ohmic Ti/Al contacts to Si+ implanted GaN

    New search for: Placidi, M.
    New search for: Perez-Tomas, A.
    New search for: Constant, A.
    New search for: Rius, G.
    New search for: Mestres, N.
    New search for: Millan, J.
    New search for: Godignon, P.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    Effects of cap layer on ohmic Ti/Al contacts to Si+ implanted GaN

    Contributors:

    Placidi, M. (author) / Perez-Tomas, A. (author) / Constant, A. (author) / Rius, G. (author) / Mestres, N. (author) / Millan, J. (author) / Godignon, P. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 255 ; 6057-6060

    Publication date:

    2009-01-01

    Size:

    4 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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