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Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition
Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition
Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition
Leone, S. (Autor:in) / Pedersen, H. (Autor:in) / Henry, A. (Autor:in) / Rao, S.P. (Autor:in) / Kordina, O. (Autor:in) / Janzen, E. (Autor:in)
MATERIALS SCIENCE FORUM ; 615/617 ; 93-96
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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