Predictions of Nitrogen Doping in SiC Epitaxial Layers

Danielsson, O. / Forsberg, U. / Janzen, E. | British Library Online Contents | 2003

Arsenic incorporation and doping behaviour in silicon and SiGe epitaxial layers grown by gas source molecular beam epitaxy

Fernandez, J. M. / Xie, M. H. / Matsumura, A. et al. | British Library Online Contents | 1995

Evaluation of p-Type Doping for (1120) Epitaxial Layers Grown on alpha-Cut (1120) 4H-SiC Substrates

Blanc, C. / Zielinski, M. / Souliere, V. et al. | British Library Online Contents | 2005

Orientation-Dependent Defect Formation in Silicon Carbide Epitaxial Layers

Yakimova, R. / Syvajarvi, M. / Iakimov, T. et al. | British Library Online Contents | 2003

Characterisation of epitaxial layers on silicon by spectroscopic ellipsometry

Dittmar, G. / Gruska, B. | British Library Online Contents | 2000