Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions: Fid-Bau Portal

Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions

Kalinina, E.V. / Zamoryanskaya, M.V. / Kolesnikova, E.V. / Lebedev, A.A.

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Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions

Kalinina, E.V. / Zamoryanskaya, M.V. / Kolesnikova, E.V. / Lebedev, A.A.

Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions

Kalinina, E.V. / Zamoryanskaya, M.V. / Kolesnikova, E.V. / Lebedev, A.A.

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Check availability in my library

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Document information

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Document information

Title:

Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions

Contributors:

Kalinina, E.V. (author) / Zamoryanskaya, M.V. (author) / Kolesnikova, E.V. (author) / Lebedev, A.A. (author)

Published in:

MATERIALS SCIENCE FORUM ; 615/617 ; 473-476

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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