Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors

Veliadis, V. / Hearne, H. / Chang, W. et al. | British Library Online Contents | 2012

Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar Transistors

Balachandran, S. / Chow, T. P. / Agarwal, A. K. | British Library Online Contents | 2006

Influence of Trenching Effect on the Characteristics of Buried-Gate SiC Junction Field-Effect Transistors

Koo, S.-M. / Lee, S.-K. / Zetterling, C.-M. et al. | British Library Online Contents | 2002

4H-SiC Bipolar Junction Transistors with a Current Gain of 108

Zhang, J. / Jonas, C. / Burk, A.A. et al. | British Library Online Contents | 2009

Ferro-electric stacked gate oxide heterojunction electro-statically doped source/drain double-gate tunnel field effect transistors: A superior structure

Singh, Balraj / Nath Rai, Trailokya / Gola, Deepti et al. | British Library Online Contents | 2017