Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
High-Temperature Reliability Assessment of 4H-SiC Vertical-Channel JFET Including Forward Bias Stress
High-Temperature Reliability Assessment of 4H-SiC Vertical-Channel JFET Including Forward Bias Stress
High-Temperature Reliability Assessment of 4H-SiC Vertical-Channel JFET Including Forward Bias Stress
Cheng, L. (Autor:in) / Mazzola, M.S. (Autor:in) / Sheridan, D.C. (Autor:in)
MATERIALS SCIENCE FORUM ; 615/617 ; 723-726
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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