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A platform for research: civil engineering, architecture and urbanism
High-Temperature Reliability Assessment of 4H-SiC Vertical-Channel JFET Including Forward Bias Stress
High-Temperature Reliability Assessment of 4H-SiC Vertical-Channel JFET Including Forward Bias Stress
High-Temperature Reliability Assessment of 4H-SiC Vertical-Channel JFET Including Forward Bias Stress
Cheng, L. (author) / Mazzola, M.S. (author) / Sheridan, D.C. (author)
MATERIALS SCIENCE FORUM ; 615/617 ; 723-726
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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