Atomic layer deposition of CeO2/HfO2 gate dielectrics on Ge substrate

Maeng, W. J. / Oh, I. K. / Kim, W. H. et al. | British Library Online Contents | 2014

Ultra‐Steep‐Slope High‐Gain MoS₂ Transistors with Atomic Threshold‐Switching Gate

Lin, Jun / Chen, Xiaozhang / Duan, Xinpei et al. | Wiley | 2022

High-Performance Top-Gated Graphene-Nanoribbon Transistors Using Zirconium Oxide Nanowires as High-Dielectric-Constant Gate Dielectrics

Liao, L. / Bai, J. / Lin, Y. C. et al. | British Library Online Contents | 2010

Interface Engineering for High-Performance Top-Gated MoS2 Field-Effect Transistors

Zou, X. / Wang, J. / Chiu, C. H. et al. | British Library Online Contents | 2014

Atomic Layer Deposition of Dielectrics on Ge and III-V Materials for Ultrahigh Performance Transistors

Wallace, R.M. / McIntyre, P.C. / Kim, J. et al. | British Library Online Contents | 2009