Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
In-Grown Stacking Faults Identified in 4H-SiC Epilayers Grown at High Growth Rate
In-Grown Stacking Faults Identified in 4H-SiC Epilayers Grown at High Growth Rate
In-Grown Stacking Faults Identified in 4H-SiC Epilayers Grown at High Growth Rate
Feng, G. (Autor:in) / Suda, J. (Autor:in) / Kimoto, T. (Autor:in) / Bauer, A.J. / Friedrichs, P. / Krieger, M. / Pensl, G. / Rupp, R. / Seyller, T.
01.01.2010
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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Single Shockley Stacking Faults in As-Grown 4H-SiC Epilayers
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Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers
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Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate
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