Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Residual Stresses and Stacking Faults in n-Type 4H-SiC Epilayers
Residual Stresses and Stacking Faults in n-Type 4H-SiC Epilayers
Residual Stresses and Stacking Faults in n-Type 4H-SiC Epilayers
Okojie, R. S. (Autor:in) / Zhang, M. (Autor:in) / Pirouz, P. (Autor:in)
MATERIALS SCIENCE FORUM ; 457/460 ; 529-532
01.01.2004
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Single Shockley Stacking Faults in As-Grown 4H-SiC Epilayers
British Library Online Contents | 2010
|Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers
British Library Online Contents | 2010
|In-Grown Stacking Faults Identified in 4H-SiC Epilayers Grown at High Growth Rate
British Library Online Contents | 2010
|British Library Online Contents | 2006
|British Library Online Contents | 2012
|