Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons: Fid-Bau Portal

Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons

Yan, F. / Devaty, R.P. / Choyke, W.J. / Danno, K. / Alfieri, G. / Kimoto, T. / Onoda, S. / Ohshima, T. / Reshanov, S.A. / Beljakowa, S.

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Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons

Yan, F. / Devaty, R.P. / Choyke, W.J. / Danno, K. / Alfieri, G. / Kimoto, T. / Onoda, S. / Ohshima, T. / Reshanov, S.A. / Beljakowa, S.

Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons

Yan, F. / Devaty, R.P. / Choyke, W.J. / Danno, K. / Alfieri, G. / Kimoto, T. / Onoda, S. / Ohshima, T. / Reshanov, S.A. / Beljakowa, S.

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Titel:

Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons

Beteiligte:

Yan, F. (Autor:in) / Devaty, R.P. (Autor:in) / Choyke, W.J. (Autor:in) / Danno, K. (Autor:in) / Alfieri, G. (Autor:in) / Kimoto, T. (Autor:in) / Onoda, S. (Autor:in) / Ohshima, T. (Autor:in) / Reshanov, S.A. (Autor:in) / Beljakowa, S. (Autor:in)