Characterization of the Defect Evolution in Thick Heavily Al-Doped 4H-SiC Epilayers

Ji, S.Y. / Kojima, K. / Ishida, Y. et al. | British Library Online Contents | 2014

Stacking Fault Formation in Highly Doped 4H-SiC Epilayers during Annealing

Chung, H. J. / Liu, J.-Q. / Henry, A. et al. | British Library Online Contents | 2003

Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

Savkina, N. S. / Lebedev, A. A. / Davydov, D. V. et al. | British Library Online Contents | 2000

Structure of "Star" Defect in 4H-SiC Substrates and Epilayers

Lee, J. W. / Skowronski, M. | British Library Online Contents | 2006

Defect Related Recombination Processes in II-VI Quantum Wells

Godlewski, M. / Bergman, J. P. / Monemar, B. et al. | British Library Online Contents | 1995