Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons: Fid-Bau Portal

Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons

Reshanov, S.A. / Beljakowa, S. / Zippelius, B. / Pensl, G. / Danno, K. / Alfieri, G. / Kimoto, T. / Onoda, S. / Ohshima, T. / Yan, F.

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Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons

Reshanov, S.A. / Beljakowa, S. / Zippelius, B. / Pensl, G. / Danno, K. / Alfieri, G. / Kimoto, T. / Onoda, S. / Ohshima, T. / Yan, F.

Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons

Reshanov, S.A. / Beljakowa, S. / Zippelius, B. / Pensl, G. / Danno, K. / Alfieri, G. / Kimoto, T. / Onoda, S. / Ohshima, T. / Yan, F.

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Titel:

Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons

Beteiligte:

Reshanov, S.A. (Autor:in) / Beljakowa, S. (Autor:in) / Zippelius, B. (Autor:in) / Pensl, G. (Autor:in) / Danno, K. (Autor:in) / Alfieri, G. (Autor:in) / Kimoto, T. (Autor:in) / Onoda, S. (Autor:in) / Ohshima, T. (Autor:in) / Yan, F. (Autor:in)

Erschienen in:

Silicon Carbide and Related Materials 2009 ; 423-426

MATERIALS SCIENCE FORUM ; 645/648

Erscheinungsdatum:

01.01.2010

Format / Umfang:

4 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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