Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons

    New search for: Yan, F.
    New search for: Devaty, R.P.
    New search for: Choyke, W.J.
    New search for: Danno, K.
    New search for: Alfieri, G.
    New search for: Kimoto, T.
    New search for: Onoda, S.
    New search for: Ohshima, T.
    New search for: Reshanov, S.A.
    New search for: Beljakowa, S.
    New search for: Bauer, A.J.
    New search for: Friedrichs, P.
    New search for: Krieger, M.
    New search for: Pensl, G.
    New search for: Rupp, R.
    New search for: Seyller, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons

    New search for: Yan, F.
    New search for: Devaty, R.P.
    New search for: Choyke, W.J.
    New search for: Danno, K.
    New search for: Alfieri, G.
    New search for: Kimoto, T.
    New search for: Onoda, S.
    New search for: Ohshima, T.
    New search for: Reshanov, S.A.
    New search for: Beljakowa, S.
    New search for: Bauer, A.J.
    New search for: Friedrichs, P.
    New search for: Krieger, M.
    New search for: Pensl, G.
    New search for: Rupp, R.
    New search for: Seyller, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons

    New search for: Yan, F.
    New search for: Devaty, R.P.
    New search for: Choyke, W.J.
    New search for: Danno, K.
    New search for: Alfieri, G.
    New search for: Kimoto, T.
    New search for: Onoda, S.
    New search for: Ohshima, T.
    New search for: Reshanov, S.A.
    New search for: Beljakowa, S.
    New search for: Bauer, A.J.
    New search for: Friedrichs, P.
    New search for: Krieger, M.
    New search for: Pensl, G.
    New search for: Rupp, R.
    New search for: Seyller, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons

    Contributors:

    Yan, F. (author) / Devaty, R.P. (author) / Choyke, W.J. (author) / Danno, K. (author) / Alfieri, G. (author) / Kimoto, T. (author) / Onoda, S. (author) / Ohshima, T. (author) / Reshanov, S.A. (author) / Beljakowa, S. (author)

    Published in:

    Silicon Carbide and Related Materials 2009 ; 419-422

    MATERIALS SCIENCE FORUM ; 645/648

    Publication date:

    2010-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons

    Reshanov, S.A. / Beljakowa, S. / Zippelius, B. et al. | British Library Online Contents | 2010

    Photoluminescence excitation spectroscopy of InGaN epilayers

    White, M. E. / O'Donnell, K. P. / Martin, R. W. et al. | British Library Online Contents | 2002

    Defect Formation and Recombination Processes in p-Type Modulation-Doped Si Epilayers

    Buyanova, I. A. / Chen, W. M. / Henry, A. et al. | British Library Online Contents | 1995

    Investigation of Photoluminescence Emission of Basal Plane Frank-Type Defects in 4H-SiC Epilayers

    Kamata, I. / Zhang, X. / Tsuchida, H. | British Library Online Contents | 2011

    The near-infrared photoluminescence of GaAs epilayers grown on Si

    Liang, J. / Li, P. / Gao, Y. et al. | British Library Online Contents | 1997

    Back to top