Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons: Fid-Bau Portal

Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons

Reshanov, S.A. / Beljakowa, S. / Zippelius, B. / Pensl, G. / Danno, K. / Alfieri, G. / Kimoto, T. / Onoda, S. / Ohshima, T. / Yan, F.

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Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons

Reshanov, S.A. / Beljakowa, S. / Zippelius, B. / Pensl, G. / Danno, K. / Alfieri, G. / Kimoto, T. / Onoda, S. / Ohshima, T. / Yan, F.

Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons

Reshanov, S.A. / Beljakowa, S. / Zippelius, B. / Pensl, G. / Danno, K. / Alfieri, G. / Kimoto, T. / Onoda, S. / Ohshima, T. / Yan, F.

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Title:

Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons

Contributors:

Reshanov, S.A. (author) / Beljakowa, S. (author) / Zippelius, B. (author) / Pensl, G. (author) / Danno, K. (author) / Alfieri, G. (author) / Kimoto, T. (author) / Onoda, S. (author) / Ohshima, T. (author) / Yan, F. (author)

Published in:

Silicon Carbide and Related Materials 2009 ; 423-426

MATERIALS SCIENCE FORUM ; 645/648

Publication date:

2010-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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