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Design and Gate Drive Considerations for Epitaxial 1.2 kV Buried Grid N-on and N-off JFETs for Operation at 250^oC
Design and Gate Drive Considerations for Epitaxial 1.2 kV Buried Grid N-on and N-off JFETs for Operation at 250^oC
Design and Gate Drive Considerations for Epitaxial 1.2 kV Buried Grid N-on and N-off JFETs for Operation at 250^oC
Lim, J.K. (Autor:in) / Bakowski, M. (Autor:in) / Nee, H.P. (Autor:in) / Bauer, A.J. / Friedrichs, P. / Krieger, M. / Pensl, G. / Rupp, R. / Seyller, T.
01.01.2010
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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