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High Growth Rate with Reduced Surface Roughness during On-Axis Homeopitaxial Growth of 4H-SiC
High Growth Rate with Reduced Surface Roughness during On-Axis Homeopitaxial Growth of 4H-SiC
High Growth Rate with Reduced Surface Roughness during On-Axis Homeopitaxial Growth of 4H-SiC
Hassan, J. (Autor:in) / Bergman, J.P. (Autor:in) / Henry, A. (Autor:in) / Janzen, E. (Autor:in) / Monakhov, E.V. / Hornos, T. / Svensson, B.G.
01.01.2011
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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