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Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers
Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers
Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers
Robert, T. (author) / Marinova, M. (author) / Juillaguet, S. (author) / Henry, A. (author) / Polychroniadis, E.K. (author) / Camassel, J. (author) / Monakhov, E.V. / Hornos, T. / Svensson, B.G.
2011-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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