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    Improved MOS Interface Properties of C-Face 4H-SiC by POCl~3 Annealing

    New search for: Kotake, S.
    New search for: Yano, H.
    New search for: Okamoto, D.
    New search for: Hatayama, T.
    New search for: Fuyuki, T.
    New search for: Monakhov, E.V.
    New search for: Hornos, T.
    New search for: Svensson, B.G.

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    Improved MOS Interface Properties of C-Face 4H-SiC by POCl~3 Annealing

    New search for: Kotake, S.
    New search for: Yano, H.
    New search for: Okamoto, D.
    New search for: Hatayama, T.
    New search for: Fuyuki, T.
    New search for: Monakhov, E.V.
    New search for: Hornos, T.
    New search for: Svensson, B.G.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Improved MOS Interface Properties of C-Face 4H-SiC by POCl~3 Annealing

    New search for: Kotake, S.
    New search for: Yano, H.
    New search for: Okamoto, D.
    New search for: Hatayama, T.
    New search for: Fuyuki, T.
    New search for: Monakhov, E.V.
    New search for: Hornos, T.
    New search for: Svensson, B.G.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
    Similar titles

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    Document information
    Title:

    Improved MOS Interface Properties of C-Face 4H-SiC by POCl~3 Annealing

    Contributors:

    Kotake, S. (author) / Yano, H. (author) / Okamoto, D. (author) / Hatayama, T. (author) / Fuyuki, T. (author) / Monakhov, E.V. / Hornos, T. / Svensson, B.G.

    Published in:

    Silicon Carbide and Related Materials 2010 ; 425-428

    MATERIALS SCIENCE FORUM ; 679/680

    Publication date:

    2011-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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