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Improved Characteristics of SiC MOSFETs by Post-Oxidation Annealing in Ar at High Temperature
Improved Characteristics of SiC MOSFETs by Post-Oxidation Annealing in Ar at High Temperature
Improved Characteristics of SiC MOSFETs by Post-Oxidation Annealing in Ar at High Temperature
Kato, M. (author) / Nanen, Y. (author) / Suda, J. (author) / Kimoto, T. (author) / Monakhov, E.V. / Hornos, T. / Svensson, B.G.
2011-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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