Structural Characterisation of GaN Layers on Sapphire Grown by MOCVD

Pecz, B. / Di Forte-Poisson, M. A. / Toth, L. et al. | British Library Online Contents | 1998

Properties of silicon pulse doped InGaP layers grown by LP-MOCVD

Malacky, L. / Kuedela, R. / Morvic, M. et al. | British Library Online Contents | 1997

Transmission electron microscopy characterization of GaN layers grown by MOCVD on sapphire

Rouviere, J. L. / Arlery, M. / Niebuhr, R. et al. | British Library Online Contents | 1997

Structure Study of the Hg~1~-~xCd~xTe VPE Layers Grown on CdTe MOCVD Substrates

Sochinskii, N. V. / Dieguez, E. / Bernardi, S. et al. | British Library Online Contents | 1995

Spectroscopic studies of Er-centers in MOCVD grown GaN layers highly doped with Er

Makarova, K. / Stachowicz, M. / Glukhanyuk, V. et al. | British Library Online Contents | 2008