Electrical and interfacial characteristics of nanolaminate (Al2O3/ZrO2/Al2O3) gate stack on fully depleted SiGe-on-insulator

Di, Z. / Zhang, M. / Liu, W. et al. | British Library Online Contents | 2006

Characteristics of sandwich-structured Al2O3/HfO2/Al2O3 gate dielectric films on ultra-thin silicon-on-insulator substrates

Cheng, X. / Song, Z. / Jiang, J. et al. | British Library Online Contents | 2005

Outstanding memory characteristics with atomic layer deposited Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 nanocomposite structures as the charge trapping layer

Han, Ping / Lai, Tian-Cheng / Wang, Mei et al. | British Library Online Contents | 2019

Preparation of polyimide/Al2O3 composite films as improved solid dielectrics

Alias, A. / Ahmad, Z. / Ismail, A. B. | British Library Online Contents | 2011

Effect of chemical surface treatments on interfacial and electrical characteristics of atomic-layer-deposited Al2O3 films on Ge substrates

Li, X. / Li, A. / Liu, X. et al. | British Library Online Contents | 2011