Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
The Influence of Gate Material, SiO~2 Fabrication Method and Gate Edge Effect on Interface Trap Density in 3C-SiC MOS Capacitors
The Influence of Gate Material, SiO~2 Fabrication Method and Gate Edge Effect on Interface Trap Density in 3C-SiC MOS Capacitors
The Influence of Gate Material, SiO~2 Fabrication Method and Gate Edge Effect on Interface Trap Density in 3C-SiC MOS Capacitors
Gutt, T. (Autor:in) / Malachowski, T. (Autor:in) / Przewlocki, H.M. (Autor:in) / Engstrom, O. (Autor:in) / Bakowski, M. (Autor:in) / Esteve, R. (Autor:in) / Alquier, D.
01.01.2012
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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