Oxidation Process by RTP for 4H-SiC MOSFET Gate Fabrication

Constant, A. / Camara, N. / Montserrat, J. et al. | British Library Online Contents | 2011

Fabrication and Characterization of 4H-SiC MOSFET with MOCVD-Grown Al~2O~3 Gate Insulator

Hino, S. / Hatayama, T. / Miura, N. et al. | British Library Online Contents | 2007

Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process

Tanimoto, S. / Kiritani, N. / Hoshi, M. et al. | British Library Online Contents | 2003

First AlGaN/GaN MOSFET with photoanodic gate dielectric

Mistele, D. / Rotter, T. / Rover, K. S. et al. | British Library Online Contents | 2002

Effects of N Implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET

Poggi, A. / Moscatelli, F. / Solmi, S. et al. | British Library Online Contents | 2009