Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density

Dudley, M. / Zhang, N. / Zhang, Y. et al. | British Library Online Contents | 2010

Growth of Low Basal Plane Dislocation Density SiC Epitaxial Layers

Zhang, Z. H. / Sudarshan, T. S. | British Library Online Contents | 2006

Low Trap Concentration and Low Basal-Plane Dislocation Density in 4H-SiC Epilayers Grown at High Growth Rate

Hori, T. / Danno, K. / Kimoto, T. | British Library Online Contents | 2007

Growth of Low Basal Plane Dislocation Density 4H-SiC Crystals in Controlled Temperature Distribution inside the Crucible

Tsuge, H. / Ushio, S. / Sato, S. et al. | British Library Online Contents | 2013

Pair-Generation of the Basal-Plane-Dislocation during Crystal Growth of SiC

Nishiguchi, T. / Furusho, T. / Isshiki, T. et al. | British Library Online Contents | 2009