Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors: Fid-Bau Portal

Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors

Veliadis, V. / Hearne, H. / Chang, W. / Caldwell, J.D. / Stewart, E.J. / Snook, M. / Howell, R.S. / Urciuoli, D. / Lelis, A.J. / Scozzie, C.

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Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors

Veliadis, V. / Hearne, H. / Chang, W. / Caldwell, J.D. / Stewart, E.J. / Snook, M. / Howell, R.S. / Urciuoli, D. / Lelis, A.J. / Scozzie, C.

Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors

Veliadis, V. / Hearne, H. / Chang, W. / Caldwell, J.D. / Stewart, E.J. / Snook, M. / Howell, R.S. / Urciuoli, D. / Lelis, A.J. / Scozzie, C.

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Check availability in my library

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Document information

Title:

Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors

Contributors:

Veliadis, V. (author) / Hearne, H. (author) / Chang, W. (author) / Caldwell, J.D. (author) / Stewart, E.J. (author) / Snook, M. (author) / Howell, R.S. (author) / Urciuoli, D. (author) / Lelis, A.J. (author) / Scozzie, C. (author)

Published in:

MATERIALS SCIENCE FORUM ; 717/720 ; 1013-1016

Publication date:

2012-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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