Temperature Impact on High-Current 1.2kV SiC Schottky Rectifiers

Jorda, X. / Tournier, D. / Rebollo, J. et al. | British Library Online Contents | 2005

Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height

Kinoshita, A. / Ohyanagi, T. / Yatsuo, T. et al. | British Library Online Contents | 2010

Deep levels in silicon carbide Schottky diodes

Castaldini, A. / Cavallini, A. / Polenta, L. et al. | British Library Online Contents | 2002

Research on the 25kW FCPS's Temperature Controlling Simulation

Hou, X. / Gui, W. / Jin, X. et al. | British Library Conference Proceedings | 2009

4kV Silicon Carbide MOSFETs

Stum, Z. / Bolotnikov, A.V. / Losee, P.A. et al. | British Library Online Contents | 2011