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Electron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing
Electron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing
Electron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing
Yao, Y.Z. (Autor:in) / Sato, K. (Autor:in) / Sugawara, Y. (Autor:in) / Ishikawa, Y. (Autor:in) / Okamoto, Y. (Autor:in) / Hayashi, N. (Autor:in) / Yamada-Kaneta, H. / Sakai, A.
01.01.2012
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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