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Electron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing
Electron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing
Electron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing
Yao, Y.Z. (author) / Sato, K. (author) / Sugawara, Y. (author) / Ishikawa, Y. (author) / Okamoto, Y. (author) / Hayashi, N. (author) / Yamada-Kaneta, H. / Sakai, A.
2012-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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