Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Effect of the post-deposition annealing on electrical characteristics of MIS structures with HfO2/SiO2 gate dielectric stacks
Effect of the post-deposition annealing on electrical characteristics of MIS structures with HfO2/SiO2 gate dielectric stacks
Effect of the post-deposition annealing on electrical characteristics of MIS structures with HfO2/SiO2 gate dielectric stacks
Taube, A. (Autor:in) / Mroczynski, R. (Autor:in) / Korwin-Mikke, K. (Autor:in) / Gieraltowska, S. (Autor:in) / Szmidt, J. (Autor:in) / Piotrowska, A. (Autor:in)
01.01.2012
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2017
|British Library Online Contents | 2017
|HfO2 as gate dielectric on Ge: Interfaces and deposition techniques
British Library Online Contents | 2006
|Acoustic spectroscopy and electrical characterization of Si/NAOS-SiO2/HfO2 structures
British Library Online Contents | 2013
|British Library Online Contents | 2005
|