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    Effect of the post-deposition annealing on electrical characteristics of MIS structures with HfO2/SiO2 gate dielectric stacks

    New search for: Taube, A.
    New search for: Mroczynski, R.
    New search for: Korwin-Mikke, K.
    New search for: Gieraltowska, S.
    New search for: Szmidt, J.
    New search for: Piotrowska, A.

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    Effect of the post-deposition annealing on electrical characteristics of MIS structures with HfO2/SiO2 gate dielectric stacks

    New search for: Taube, A.
    New search for: Mroczynski, R.
    New search for: Korwin-Mikke, K.
    New search for: Gieraltowska, S.
    New search for: Szmidt, J.
    New search for: Piotrowska, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Effect of the post-deposition annealing on electrical characteristics of MIS structures with HfO2/SiO2 gate dielectric stacks

    New search for: Taube, A.
    New search for: Mroczynski, R.
    New search for: Korwin-Mikke, K.
    New search for: Gieraltowska, S.
    New search for: Szmidt, J.
    New search for: Piotrowska, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    Effect of the post-deposition annealing on electrical characteristics of MIS structures with HfO2/SiO2 gate dielectric stacks

    Contributors:

    Taube, A. (author) / Mroczynski, R. (author) / Korwin-Mikke, K. (author) / Gieraltowska, S. (author) / Szmidt, J. (author) / Piotrowska, A. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 177 ; 1281-1285

    Publication date:

    2012-01-01

    Size:

    5 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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