Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Modeling of altered layer formation during reactive ion etching of GaAs
Modeling of altered layer formation during reactive ion etching of GaAs
Modeling of altered layer formation during reactive ion etching of GaAs
Mutzke, A. (Autor:in) / Rai, A. (Autor:in) / Schneider, R. (Autor:in) / Angelin, E. J. (Autor:in) / Hippler, R. (Autor:in)
APPLIED SURFACE SCIENCE ; 263 ; 626-632
01.01.2012
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Improving reactive ion etching selectivity of GaAs/AlGaAs with He plus
British Library Online Contents | 2004
|British Library Online Contents | 1994
|British Library Online Contents | 1997
|British Library Online Contents | 2001
|Oxide via hole formation using magnetically enhance reactive ion etching
British Library Online Contents | 2005
|