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Modeling of altered layer formation during reactive ion etching of GaAs

Mutzke, A. / Rai, A. / Schneider, R. / Angelin, E. J. / Hippler, R.

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Modeling of altered layer formation during reactive ion etching of GaAs

Mutzke, A. / Rai, A. / Schneider, R. / Angelin, E. J. / Hippler, R.

Modeling of altered layer formation during reactive ion etching of GaAs

Mutzke, A. / Rai, A. / Schneider, R. / Angelin, E. J. / Hippler, R.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Modeling of altered layer formation during reactive ion etching of GaAs

Contributors:

Mutzke, A. (author) / Rai, A. (author) / Schneider, R. (author) / Angelin, E. J. (author) / Hippler, R. (author)

Published in:

APPLIED SURFACE SCIENCE ; 263 ; 626-632

Publication date:

2012-01-01

Size:

7 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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