Relation between Defects on 4H-SiC Epitaxial Surface and Gate Oxide Reliability: Fid-Bau Portal

Relation between Defects on 4H-SiC Epitaxial Surface and Gate Oxide Reliability

Sameshima, J. / Ishiyama, O. / Shimozato, A. / Tamura, K. / Oshima, H. / Yamashita, T. / Tanaka, T. / Sugiyama, N. / Sako, H. / Senzaki, J.

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Relation between Defects on 4H-SiC Epitaxial Surface and Gate Oxide Reliability

Sameshima, J. / Ishiyama, O. / Shimozato, A. / Tamura, K. / Oshima, H. / Yamashita, T. / Tanaka, T. / Sugiyama, N. / Sako, H. / Senzaki, J.

Relation between Defects on 4H-SiC Epitaxial Surface and Gate Oxide Reliability

Sameshima, J. / Ishiyama, O. / Shimozato, A. / Tamura, K. / Oshima, H. / Yamashita, T. / Tanaka, T. / Sugiyama, N. / Sako, H. / Senzaki, J.

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Titel:

Relation between Defects on 4H-SiC Epitaxial Surface and Gate Oxide Reliability

Beteiligte:

Sameshima, J. (Autor:in) / Ishiyama, O. (Autor:in) / Shimozato, A. (Autor:in) / Tamura, K. (Autor:in) / Oshima, H. (Autor:in) / Yamashita, T. (Autor:in) / Tanaka, T. (Autor:in) / Sugiyama, N. (Autor:in) / Sako, H. (Autor:in) / Senzaki, J. (Autor:in)

Erschienen in:

Silicon Carbide and Related Materials 2012 Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation ; 745-748

MATERIALS SCIENCE FORUM ; 740/742

Erscheinungsdatum:

01.01.2013

Format / Umfang:

4 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

Yamada, K. / Ishiyama, O. / Tamura, K. et al. | British Library Online Contents | 2014

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Itsumi, M. | British Library Online Contents | 2000

Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers

Soloviev, S. / Matocha, K. / Dunne, G. et al. | British Library Online Contents | 2009

Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers

Soloviev, S. / Matocha, K. / Dunne, G. et al. | British Library Online Contents | 2009

Impact of Oxidation Conditions and Surface Defects on the Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC

Hatakeyama, T. / Suzuki, T. / Ichinoseki, K. et al. | British Library Online Contents | 2010

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