Relation between Defects on 4H-SiC Epitaxial Surface and Gate Oxide Reliability: Fid-Bau Portal

Relation between Defects on 4H-SiC Epitaxial Surface and Gate Oxide Reliability

Sameshima, J. / Ishiyama, O. / Shimozato, A. / Tamura, K. / Oshima, H. / Yamashita, T. / Tanaka, T. / Sugiyama, N. / Sako, H. / Senzaki, J.

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Relation between Defects on 4H-SiC Epitaxial Surface and Gate Oxide Reliability

Sameshima, J. / Ishiyama, O. / Shimozato, A. / Tamura, K. / Oshima, H. / Yamashita, T. / Tanaka, T. / Sugiyama, N. / Sako, H. / Senzaki, J.

Relation between Defects on 4H-SiC Epitaxial Surface and Gate Oxide Reliability

Sameshima, J. / Ishiyama, O. / Shimozato, A. / Tamura, K. / Oshima, H. / Yamashita, T. / Tanaka, T. / Sugiyama, N. / Sako, H. / Senzaki, J.

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Title:

Relation between Defects on 4H-SiC Epitaxial Surface and Gate Oxide Reliability

Contributors:

Sameshima, J. (author) / Ishiyama, O. (author) / Shimozato, A. (author) / Tamura, K. (author) / Oshima, H. (author) / Yamashita, T. (author) / Tanaka, T. (author) / Sugiyama, N. (author) / Sako, H. (author) / Senzaki, J. (author)

Published in:

Silicon Carbide and Related Materials 2012 Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation ; 745-748

MATERIALS SCIENCE FORUM ; 740/742

Publication date:

2013-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers

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Impact of Oxidation Conditions and Surface Defects on the Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC

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