Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation

Auret, F.D. / Meyer, W.E. / Diale, M. et al. | British Library Online Contents | 2011

Electrical and structural characterization of defects introduced in p-SiGe during low energy erbium implantation

Mamor, M. / Pipeleers, B. / Auret, F. D. et al. | British Library Online Contents | 2003

Compensation for acceptor centers in Al~xGa~1~-~xAs layers by Er^+-implantation and thermal treatment

Choy, S. E. / Kang, T. W. / Kim, T. W. et al. | British Library Online Contents | 1997

Impurity Centers Associated with Magnesium Introduced in Silicon by Fast Neutron Transmutation Reactions

Emtsev, V. V. / Poloskin, D. S. / Shek, E. I. et al. | British Library Online Contents | 1995

Defects Introduced by Electron-Irradiation at Low Temperatures in SiC

Son, N.T. / Isoya, J. / Morishita, N. et al. | British Library Online Contents | 2009