Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle: Fid-Bau Portal

Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle

Masumoto, K. / Ito, S. / Goto, H. / Yamaguchi, H. / Tamura, K. / Kudou, C. / Nishio, J. / Kojima, K. / Ohno, T. / Okumura, H.

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Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle

Masumoto, K. / Ito, S. / Goto, H. / Yamaguchi, H. / Tamura, K. / Kudou, C. / Nishio, J. / Kojima, K. / Ohno, T. / Okumura, H.

Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle

Masumoto, K. / Ito, S. / Goto, H. / Yamaguchi, H. / Tamura, K. / Kudou, C. / Nishio, J. / Kojima, K. / Ohno, T. / Okumura, H.

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Titel:

Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle

Beteiligte:

Masumoto, K. (Autor:in) / Ito, S. (Autor:in) / Goto, H. (Autor:in) / Yamaguchi, H. (Autor:in) / Tamura, K. (Autor:in) / Kudou, C. (Autor:in) / Nishio, J. (Autor:in) / Kojima, K. (Autor:in) / Ohno, T. (Autor:in) / Okumura, H. (Autor:in)

Erschienen in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 99-102

MATERIALS SCIENCE FORUM ; 778/780

Erscheinungsdatum:

01.01.2014

Format / Umfang:

4 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

Zhang, X. / Nagano, M. / Tsuchida, H. | British Library Online Contents | 2013

Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers

Kamata, I. / Nagano, M. / Tsuchida, H. | British Library Online Contents | 2010

Why are Only Some Basal Plane Dislocations Converted to Threading Edge Dislocations during SiC Epitaxy?

Zhang, Z. H. / Shrivastava, A. / Sudarshan, T. S. | British Library Online Contents | 2006

Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth

Stahlbush, R.E. / Van Mil, B.L. / Liu, K.X. et al. | British Library Online Contents | 2009

Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers

Ha, S. / Mieszkowski, P. / Rowland, L. B. et al. | British Library Online Contents | 2002

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